The Miraj Diamond™ Platform


Breakthrough Materials


Amongst the previous reports of n-type (P-doped) diamond, nearly all reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping, where dislocations are incorporated into the volume during (111) growth.  These dislocations, which are known scattering sites, subsequently lower mobility rendering poor conductance and high resistivity.  Further, scattering based analysis, such as micro-focused Raman, are unable to distinguish between processed and intrinsic films, as films are otherwise smooth and are in good crystalline agreement as evidenced by a variety of experimental reports.  However, all films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic.

  • Confirmed Technological Breakthrough: morphological, phase, and electrical characterization performed in collaboration with Argonne National Laboratory Center for Nanoscale Materials
  • Demonstrated on a wide variety of grain scales: UNCD, NCD, & Poly.
  • Tested under Extreme Operating Environments: Ultra-High Vacuum, 2K<T<380K)
  • Prototype Device Demonstrations: Optoelectronic (UV LED), RF attenuator (PIN Diode), FET (in fabrication)



The AKHAN Technologies Miraj Diamond™ platform process is the only process in diamond found viable for enabling diamond microelectronics use.  Key advantages unique to Miraj Diamond™ include low temperature deposition on Si coupled with proprietary processing technique, allowing integration with existing device types, while the superior performance of the Miraj Diamond™ platform allows improved electronic performance with minimal diamond thickness requirements, all while coupling present devices with the ideal heat spreading material. 



Practical Bipolar devices fabricated for the first time on Low cost Nanocrystalline Diamond (NCD) and polycrystalline diamond (Diamond-on-Silicon and Diamond-on-Insulator) wafers.  Increased processing efficiency has rendered ultra-smooth, high yield, high uniformity film-quality.High precision (small feature size) architecture, allowing submicron (nm) control and microelectronic device fabrication, coupled with unrivaled material characteristics, allow for diamond to dramatically impact the global semiconductor market with:

-Faster devices (no degraded performance under high heat or high power drive conditions with ultra-high electron mobility)
>Lower material cost (30x to 1000x thinner material required to accomplish the same device function)
>Lower system level cost (no added heat sinking needed, slower system temperature rise, less cooling equipment required)
>Unbridled efficiency (highest power handling capability, power switching capability, switching speed,  lowest On-state resistance, and ultimate high frequency capability)
>Extreme Environment Capability (High Heat, High Power, High Pressure, Nuclear, Biological, Chemical, etc.)
>Superior Scalability (nm to mm device feature size capability on 100, 200, and 300 mm commercial wafers)


Published Materials