Amongst the previous reports of n-type (P-doped) diamond, nearly all reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping, where dislocations are incorporated into the volume during (111) growth. These dislocations, which are known scattering sites, subsequently lower mobility rendering poor conductance and high resistivity. Further, scattering based analysis, such as micro-focused Raman, are unable to distinguish between processed and intrinsic films, as films are otherwise smooth and are in good crystalline agreement as evidenced by a variety of experimental reports. However, all films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic.
- Confirmed Technological Breakthrough: morphological, phase, and electrical characterization performed in collaboration with Argonne National Laboratory Center for Nanoscale Materials
- Demonstrated on a wide variety of grain scales: UNCD, NCD, & Poly.
- Tested under Extreme Operating Environments: Ultra-High Vacuum, 2K<T<380K)
- Prototype Device Demonstrations: Optoelectronic (UV LED), RF attenuator (PIN Diode), FET (in fabrication)